III-V materials epitaxy
III-V Lab
The mission of III-V Lab is to perform research and development on III-V semiconductor components, and integration with Si circuits and micro-systems, from basic research to technology transfer for industrialisation, or to small scale and pilot line production.
MedPhab partner
[TECHNICAL] TECHNICAL SERVICES
Photonic components
PHOTONIC COMPONENTS [Integrated circuits] InP
PC1 Integrated circuits
InP
III-V Lab can provide epitaxial stacks on InP substrates using a MOVPE Aixtron reactor in 6x2 inches, 3x3 inches or 1x4 inches configuration. The composition of the different layers, including the active region (quantum wells, barriers and SCH layers), can be ajusted to obtain the chosen emission wavelength.
Wafer size 2, 3 or 4 inches
Substrate InP
Active region 1 to 12 quantum wells
Wavelength 1200 to 1600 nanometers
Thickness of the epitaxied structures up to 5 microns
Doping materials Si or S (N type) Zn or C (P type)
1.0
5
5
9001
hours