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Electron Beam Lithography Technology SiN
imec
MedPhab partner
[TECHNICAL] TECHNICAL SERVICES
Photonic components Post-Processing Development Support
PHOTONIC COMPONENTS [Integrated circuits] Silicon photonics
PC1 Integrated circuits
Silicon photonics
[System design] PICs / Optical elements
Technology provider Manufacturer R&D
mec offers a flexible technology for rapid prototyping and verifying design ideas. Sample sizes up to 3 cm x 4 cm are possible with top guiding layer of SiN. For visible wavelengths (in the range of 600 -800 nm) Imec offers SiN, grown using PECVD.
Electron Beam Lithography Technology (e-beam writing) for SiN
Waveguide loss (PECVD SiN) < 0.5 dB/cm
Bottom oxide layer 2 microns
SiN guiding layer 150
Sample dimensions < 3 x 4 cm x cm
Etch depth 180 nm
Grating period (fill factor 50%) 200 nm
Feature size 100 nm
Taper width 100 nm
Ring resonator (gap) 150 nm
Imec offers a flexible technology for rapid prototyping and verifying design ideas. Sample sizes up to 3 cm x 4 cm are possible with top guiding layer of SiN. For visible wavelengths (in the range of 600 -800 nm) Imec offers SiN (grown using PECVD) with
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10 chips in weeks
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